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Product No. W7101A Product Name Silicon carbide (4H-SiC)
Category Wafer Specifications 3-430-N-#07A
Technical Report
Silicon carbide wafer options: 
(1)    Polytype: 6H or 4H 
(2)    Dopant: Nitrogen or  N/A (Semi-Insulating) or
(3)    Diameter: 2” or 3” or (10 mmx10mm, 20mmx20mm) 
(4)    Thickness: 0.33mm or 0.43mm
(5)    Orientation: off [0001] 0°, (3.5°, , 8°) 
(6)    MPD: Grade A-10 /cm2, Grade B-30 /cm2, Grade C-50 /cm2
(7)    Polish options: 
Si face: 
    P1: CMP,EPI-ready, Ra<0.5nm 
(P2: Optical polish Ra<1nm )
(P3: Lapping, Ra<1um )
C face:  
    P2: Optical polish Ra<1nm 
(P3: Lapping, Ra<1um) 
MSDS
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