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Products:
- Semiconductor materials: 5N-6N Semiconductor compound (VI, V, IV, III, II, I group in binary, ternary and quaternary) : Sulfide, Selenide, Telluride, Arsenide, Antimonide, Phosphide, and Metals; powder (e.g. 0.1-1-10um etc.) and irregular piece, sputtering target and customized monocrystallits/wafer.

- Advanced ceramic/glass: 2N-5N, Oxide, Rare earth oxide, Carbide, Nitride, Boride, Sulfide & Fluoride; Other inorganic solid; in the form of powder, sintered piece or tablet or HIP'ed part and Crystal (rod/disc) etc. and the glass powder/whisker/fiber/balls; quartz, fused oxides/SiC. 

- Vapor deposition and Sputtering materials: 2N-4N, Metal oxide, Metal, Rare earth metals, Compounds of semiconductor and alloy in powder, piece; and  disc or rectangular plate and back-bonded target. 

- Inorganic compounds (95%-99.99%) : Metal sulfide,  Fluoride, Acetate, Bromide, Chloride, Carbonate, Carbonyl, Nitrate, Hydride, Idodide, Sulfate, Oxalate of metals, lithium, rare earth and noble metals etc. 

- Catalyst materials: High surface materials: Aluminia, nano noble metal on active Carbon etc., Carbon molecular seive, and metal alloys, and other porous support  etc.

- Functional materials: magnetic, e-conductor, optical; textile, balls, abrasives, mould, crucibles, container/vessel, pastes ....
  
 
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The materials/chemicals: 
(a) the purities such as tech grade, 2N, 3N, 4N, 5N, 6N,
(b) sizes from micro-, submicro-, nano particle/powder to mm grain,  
(c) crystalline and amorphous, 
(d) whisker, flake, fiber, porous materials/part,
(e) different cation valences/off stoichemistry in oxide,  sulfide, telluride etc.
(f) dopant options,
(g) tablet, target, metal ingot/alloy foil/sheet, plate, wire/rod, etc.
(h) intermediate alloys; stainless steel, and alloys of Ni, Co, Fe, Al, Cu, Ti base etc.;
(i)  paste or sintered part;
(j) mono-crystal of semiconductor compound, oxide, fluoride and some metal and
(k) their wafer (epi-) and substrate
(l) some other related precursor for your R&D & industrial supply.

1. Raw materials including target and workpiece:
1.1 Metal and alloy target: 3N-6N, Aluminum (Al), Antimony (Sb), Arsenic (As), Barium (Ba), Bismuth (Bi), Boron (B), Chromium (Cr), Copper (Cu), Cobalt (Co), Calcium (Ca),  Cadmium (Cd),  Gallium (Ga), Germanium (Ge), Gold (Au), Graphite (C), Diamond, Lithium (Li), Indium (In), Magnesium (Mg), Manganese (Mn), Molybdnum (Mo), Nickel (Ni), Niobium (Nb), Lead (Pb), Palladium (Pd), Phosphorus (P), Platinum (Pt), Potassium (K), Rhodium (Rh), Ruthenium (Ru), Selenium (Se), Sodium (Na), Sulfur (S), Selenium (Se), Silicon (Si), Silver (Ag), Strontium (Sr), Tantalum (Ta), Tellurium (Te), Tin (Sn), Titanium (Ti), Vanadium (V), Tungsten (W), Zirconium (Zr) and  Zinc (Zn) as  well as Rare earth metals and their alloys; 
- powders (5 to 100 nm, 200 to 800 nm, 1-2 um, -325 mesh, -100 mesh) grains, ingot, rods/wires, plate/sheet/foil, tubes, ...

Rare earth metals: Yttrium (Y), Lanthanum (La), Cerium (Ce), Dysprosium (Dy), Praseodymium (Pr), Neodymium (Nd), Samarium (Sm), Europium (Eu), Gadolinium (Gd), Holmium (Ho), Erbium (Er), Terbium (Tb), Thulium (Tm), Lutetium (Lu), Ytterbium (Yb), Scandium (Sc), multi-Rare earth metal alloys: 2N5-4N.

Mono crystal of Aluminum (Al), Antimony (Sb), Bismuth (Bi), Cadmium (Cd), Copper (Cu), Gallium (Ga), Germanium (Ge), Indium (In), Lead (Pb), Silver (Ag), Silicon (Si), Tin (Sn),  and some alloys etc. as rod.

Alloys of above metals (98%, 99%, 3N, 4N): bi-, multi- elements and rare earths/metals alloy, Aluminum, Copper, Iron, Cobalt, Nickel, Titanium, Tungsten, Lead, Tin, Zinc, Si-Cr-Ti, Zirconium, battery micro-alloys,  Steel, noble-alloys .....

in powder form from nanosize, -325-100 mesh, beads/balls; wire/rods, tubes, foil/plate and geometrical works.
 
Refining agent: for Alloy of Aluminum Steel etc.

Magnetic alloys: Nd-Fe-B, SmCo, Ferrite; powder and geometrical pieces.

1.2 Aluminates: Aluminate of Magnesium (MgAl2O4), Strontium (SrAl12O19), Calcium (Ca3Al2O6), Rare earth such as Yttrium [Y4Al2O9 (YAG)], and complex, rare earth doped ones … 99.95%-99.99%, < 1 um, 1-3 um, 10-30 um, sputtering materials 

1.3 Titanates: Titanate of Aluminum (Al2TiO5), Barium (BaTiO3), Bismuth  (Bi12TiO20 etc.), Barium-strontium [Ba(1-x)SrxTiO3], Calcium (CaTiO3), Copper-calcium (CaCu3Ti4O12, CCTO), Magnesium  (MgTiO3),   Strontium (SrTiO3),  Cesium (Cs2TiO3), Iron  (Fe2O3:3TiO2), Lithium (Li2TiO3), Neodymium  (Nd2O3:3TiO2),  Lead  (PbTiO3), Zinc (ZnTiO3), Rare  earth such as Yttrium (Y2O3:3TiO2), Lanthanium (La2O3:3TiO2), Samarium (Sm2O3:3TiO2) and complex, rare earth etc. doped ones … 99.8%-99.99%, < 1 um, 1-3 um, 10-30 um,  sputtering materials
 
1.4 Zirconates: Zirconate of Barium (BaZrO3), Bismuth (2Bi2O3:3ZrO2), Lanthanum (2La2O3:3ZrO2), Rare earth, Calcium (CaZrO3), Lead (PbZrO3), Lithium (Li2ZrO3), Cesium (Cs2ZrO3), Magnesium (MgZrO3), Strontium (SrZrO3), and the doped or complex oxides such as Lead Lanthanum zirconate-titanate [Pb,La(Zr,Ti)Ox] etc. complex, rare earth doped ones … 99.8%-99.99%, 0.1-0.5 um, < 1 um, 3-6 um, 5-8 um, 10-30 um,  1-5 mm, sputtering materials.

1.5 Metal Oxides (with varied valences): Oxide of Aluminum (Al2O3, Alpha, gamma), Bismuth (Bi2O3), Boron (B2O3, B(OH)3), Beryllium (Be2O3), Barium (BaO), Cadmium (CdO), Calcium (CaO), Cerium (CeO2, Ce2O3), Chromium (Cr2O3), Cobalt (CoO, Co2O3, Co3O4), Copper (CuO, Cu2O), Gallium (Ga2O3), Germanium (GeO2), Hafnium (HfO2), Indium (In2O3, ITO, ATO), Iron (FeO, Fe2O3, Fe3O4, BaFe9O12, SrFe9O12), Lithium (Li2O), Magnesium (MgO, MgO2), Manganese (MnO, Mn2O3, MnO2, Mn3O4), Molybdenum (MoO2, MoO3),  Niobium (NbO2, Nb2O5), Nickel (NiO, Ni2O3, Ni3O4), Lead (PbO, PbO2, Pb3O4), Phosphorous (P2O5), Antimony (Sb2O3, Sb2O5),  Silicon (SiO2, SiO), Silver (Ag2O), Strontium (SrO), Tellurium (TeO2), Tin (SnO2), Titanium (TiO, TiO2, Ti2O3, Ti4O7, Ti3O5), Tantalum (Ta2O5), Tungsten (WO3, WO2.92), Zinc (ZnO, ZnO2), Zirconium (ZrO2), and CeO2/CaO/Y2O3/Yb2O3 doped/stabilized ZrO2…complex, doped ones, 3N-5N, and sputtering materials. 

Rare earth oxides (Ln-Sc):  (1) single metal R.E. oxide: 3N, 4N, 5N, 6N; particle size such as: 0.1-0.5 um, < 1 um, 3-6 um, 5-8 um, 10-30 um and (2) multi-metal R.E. Oxide of Y-Eu, Y-Eu-Sm, Y-Tb, Y-Zr, Ce-Zr, Ce-Tb, La-Ce, La-Ce-Tb, La-Ce-Zr, La-Ce-Y-Zr, Pr-Nd, Gd-Tb, ....

1.6 Complex Oxides: 
Molybdate of Barium, Strontium, Calcium, Copper, Nickel, Silver, Zinc, Aluminium, Lead;
Niobate & Tantalates of Barium, Strontium, Calcium, Rare earth;
Stannate of Barium etc., 
Tungstate of Barium, Strontium, Calcium, Magnesium, Rubium, Nickel, Cobalt, Mangnese (II), Lead, Cadmium, Lithium, Bismuth, Cerium etc. and other complex or doped ceramic powders;
99.8%-99.99%, < 1 um, 1-3 um, 10-30 um and sputtering materials.

4N and 5N powder, piece and target: Al2O3-SiO2, ZnO-Al2O3, ZnO-MgO (MZO), ZnO-SnO2 (TZO), ZnO-Ga2O3 (GZO), ZnO-Y2O3 (YZO), In2O3-SnO2 (ITO), In2O3-ZnO (IZO), In2O3-Sb2O3 (ATO), In2O3-CdO, GaInO3, CdO-Sb2O3....

Other compounds: Carbonates, Phosphates, Sulphates, Compounds of Lithium, Rubdium, Cesium, Barium, Strontium, Magnesium, Calcium, Rare earths....

1.7 Materials for Sputtering or Vapor Deposition: the materials on this page from 3N-6N,
(I) Un-doped compounds in sizes such as -325, -30 mesh, 3-5 mm, 5-10 mm etc.:

(i) Oxide of Titanium/Niobium/Tantalum (Ti/Nb/TaO, Ti/Nb/Ta2O3,  Ti/Nb/TaO2,  Ti/Nb/Ta2/3O5), Silicon (SiO, SiO2), Tin (SnO2), Tungsten (WOx), Zinc (ZnO), Zinc aluminum or tin (ZAO, ZTO), Zirconium (ZrO2), Copper (CuO), Magnesium (MgO), Cerium (CeO2), Rare earth oxide (4N-6N); Titanates of Barium (BaTiO3), Strontium(SrTiO3), Calcium (CaTiO3), ..., Lanthanum (LaTiOx), Rare earth, Aluminates (MgAl4O9), Molybdates, and other Oxides;

(ii) Semiconductor compounds: Sulfides listed below, Selenides such as CuInSe2 (CIS), CuInxGa1-xSe (GIGS), Ga2Se3, In2Se3 ..., Tellurides: Bi2Te3, ... ZnTe;

(iii) Fluoride of Lithium (LiF), Magnesium (MgF, MgF2), Calcium (CaF2), Strontium (SrF2), Barium (BaF2),  Rare earth, ...

(iv) Rare earths metals, oxide, fluoride...; 
and
(III) Tablet: dia. 10-50 mm
(IV) sintered piece: 5-50 mm.
(V) Castings or sintered: plate, disc;thickness 10-50 mm, dia. 1"-8" or length up 1.2 m or longer.
 
1.8  Semiconductor (binary, ternary, quaternary) compounds of III-V, II-VI, IV-VI, & Non-oxide compounds  and doped or complex ones: Arsenides, Antimonides, Phosphides, Sulfides, Selenides, Tellurides, Fluorides, Bromide, Iodides, and other compound compounds; Carbides, Nitrides, Borides and Hydride;

(1) Arsenide of Indium (InAs, powder and monocrystal), InGaAs, Gallium (GaAs), Tin (SnAs), Bismuth (BiAs), Cadmium (Cd3As2, CdGaAs2), Lead (PbAs), Aluminum (AlAs, AlxGa1-xAs), Zinc (Zn3As2), ... Arsenic alloy: Cu-As etc.
Raw materials: 2N-6N, pieces, rods, grains, micro, nano sizes, and sputtering target and customized monocrystal and wafer.

(2) Antimonide of Gallium (GaSb), Germanium (GeSb), Indium (InSb), Tin (SnSb), Bismuth (BiSb), Lead (PbSb), Aluminum (AlSb)...
Raw materials: 2N-6N, pieces, rods, grains, micro, nano sizes, and sputtering target and customized monocrystal and wafer.

(3) Borides: Boride of Carbon (B4C), Chromium (CrB2), Cerium (CeB6),  Calcium (CaB6), Lanthanum (LaB6) (nano powder, rod, mono-crystal), Europium (EuB6), and LaEuB6, of Praseodymium (PrB6), Rare earth Borides, Molybdenium (MoB, MoB2), Niobium (NbB, NbB2), Silicon (SiB2), Tantalum (TaB, TaB2), Titanium (TiB2), Tungsten (WB, WB2, W2B, W2B5), Yttrium (YB6), Zirconium (ZrB2), etc.,
95%-99.5%, sub/micro-, 1-5 um, 10-20, 50 um
and nanosize Powder and Sputtering target.

(4) Carbides: 4H/6H-SiC wafer, of Silcon (Alpha SiC, Beta SiC, SiC2), Born (B4C)Chromium (Cr3C2), Hafnium (HfC), Iron (Fe3C), Tantalum (TaC), Tungsten (WC), Niobium (NbC), Vanadium (VC), Zirconium (ZrC) and others as well as multi-metal carbides such as M1-yNyCxN1-x, W1-x-yMyNxC (M, N=Ti, Mo, Nb, Ta, Cr, V, Mn, etc.),  etc.:
97%-99.9%, sizes: sub/micro-, 1-5 um, 20, 100 um and nano Powder and Sputtering target.

(5) Nitrides: Nitride of Aluminum (AlN), Antimony (SbN), Born (BN), Bismuth (BiN),  Chromium (Cr2N, CrC1-xNx), Copper (Cu3N), Cobalt (Co3N), Gallium (GaN), Germanium (Ge3N2, Ge3N4), Selenium (Se3N4), Hafnium (HfN), Indium (InN), Iron (FeN, Fe3N), Lead (Pb3N4), Lithium (LiN3),  Managnese (Mn3N), Molybdenum (MoN), Nickel (NiN), Niobium (NbN), Rare earth such as Lanthanum (LaN), Yttrium (YN), Cerium (CeN), Neodymium (NdN), … Lutetium (LuN) etc. Tantalum (TaN), Titanium (TiN, TiN0.8), Silicon (Si3N4), Tin (Sn3N4), Tungesten (WN2), Titanium (TiC1-xNx), Vanadium (VN, VC1-xNx), Zinc (Zn3N2), Zirconium (ZrN);  LiMoN2, LiNbN2, FeWN2, etc.

98%-4N, sizes: nano, submicro-, 1-5 um, 20 um, Powder and Sputtering target.

(6) Fluorides: Fluoride of (a) rare earths such as Lanthanum (LaF3), Yttrium (YF3), Cerium (CeF3), …Lutetium (LuF3), purity: 2N-4N, sizes: 0.1 um, 2-3 um, 8-10 um, 5 mm;  and  (b) metals such as Aluminum (AlF3), Antimony (SbF5), Arsenic (AsF3), Born (BF3), Barium (BaF2), Bismuth (BiF3), Calcium (CaF2), Cadmium (CdF2), Cesium (CsF), Chromium (CrF3), Cobalt (CoF3), Copper (CuF2), Gallium (GaF3), Germanium (GeF4), Selenium (SeF6), Silicon (SiF4), Strontium (SrF2),  Magnesium (MgF2), Managnese (MnF4), Lead (PbF2), Hafnium (HfF4), Indium (InF4), Lithium (LiF), Niobium (NbF4),  Nickel (NiF3), Potasium (KF), Sodium (NaF), Na3AlF6,  Rubdium (RbF), Tin (SnF4), Tantalum (TaF5), Titanium (TiF4), Tungsten (WF6), Zinc (ZnF2), Zirconium (ZrF4) and complex fluorides…the specifications such as: 2N-4N, grains, micro- submicro- and nanoscale, - 100 mesh,
5N-6N: CaF2, MgF2, InF3, BiF3, PbF4, SbF5, SnF4, ...

Glass, monocrystal and sputtering materials.

(7)  Iodides of Silver (AgI), Lithium (LiI), Sodium (NaI), Magnesium (MgI2), Calicium (CaI2), Cesium (CsI2), Copper (CuI), Iron (FeI2), Lead (PbI2), Mercury (HgI2), Tin (SnI2), Zinc (ZnI2), Rare earths: Lanthanum (LaI3), ...Lutetium (LuI3), Scandium (ScI3);

Purity: 2N-4N

(8) Bromides of rare earths: 3N and 4N, powder, anhydrous; Lithium (LiBr), Sodium (NaBr), Silver (AgBr), Calicium (CaBr2), Magnesium (MgBr), Potassium (KBr), Cesium (CsBr2), Cobalt (CoBr2), Copper (CuBr) ... Zinc (ZnBr2).
Purity: 2N-4N

(9) Chlorides of Zinc (ZnCl2), Silver (AgCl), Copper (CuCl), InCl3, Rare earth, .... 3N-4N;

(9.1 )inorganic compounds:
Carbonate of Lithium, Cs, Rare earth             (3N-4N)
Nitrate: of Bismuth, Indium, Rare earth,       (3N-4N)
Sulfate of Indium, Bismuth, Tin, Rare earth ...  (3N-4N)
Chloride of of Indium, Bismuth, Tin, Rare earth ...  (3N-4N)
Carbonyl of Iron, Chromium, Nickel, Cobalt, Manganese, Molybdenum, Tungsten;
Acetate,
Acetylacetonate of Indium, Gallium, ..., iron (II, III), Cobalt, Nickel, Titanium, ... Gold, Silve, Yttrium, ....
Stearate of Calcium, Magnesium, Zinc, Cesium ....
..
.

(10) Hydride of rare earth (Ln-Sc, LnH2-3), Zirconium (ZrH2-4), Titanium (TiH2-4), Sodium (NaH), Calcium (CaH2), Magnesium (MgH2), Lithium (LiH), Li-B, Li-Al, ... 

(11) Lithium, Rubidium, Cesium compounds (titanate, zirconate etc.) or salts (Carbonate, Iodide, Bromide, Nitrate, Fluoride, etc.);  3N-5N

(12) Phosphides
: Phosphide of Indium (InP, InGaAsP), Gallium (GaP, GaAsP), Germanium (GeP), Zinc (Zn2P3, ZnP2), Iron (FeP, Fe2P, Fe3P), Aluminum (AlP); Semiconductor materials.
Copper (CuP2, Cu3P), CuPx (x=8,10,12,14 etc.) Cobalt (CoP3),

(13) Selenides of metals
: Selenide of Aluminum (Al2Se3), Antimony (Sb2Se3), Arsenic (As2Se3), Bismuth (BiSe, Bi2Se3), Bi2Te0.7Se0.3 (N-type), Cadmium (CdSe), Cobalt (CoSe), Copper (CuSe, Cu2Se), Copper indium gallium (CuInxGa1-xSe, CIGS),  CuInSe2 (CIS), Chromium (CrSe), Gallium (GaSe, Ga2Se3), Magnesium (MgSe), Manganese(IV) (MnSe2), Mercury(II) (HgSe), Indium (InSe, In2Se3), Iron (FeSe), Lead (II) (PbSe), PbSnSe, Silver (I) (Ag2Se), AgGaSe2, AgGaSe, Tin(II) (SnSe), Zinc (ZnSe), Cu(In,Ga)Se2; Erbium (ErSe, Er2Se3), Europium (EuSe, Eu2Se3), Cerium (CeSe, Ce2Se3), Gadolinium (GdSe, Gd2Se3).

Semiconductor and ceramic raw materials: 2N-6N, nano-, submicro-, micro-size, mm grains, pieces and sputtering target and customized monocrystal and wafer.

(14) Sulfides
of metals and rare earths: Sulfides of Aluminum (Al2S3), Antimony (Sb2S3), Arsenic (As2S3), Barium (BaS), Bismuth (BiS, Bi2S3), Cadmium (CdS), Chromium (III) (CrS, CrS2, Cr2S3), Cobalt (CoS, CoS2), Copper (CuS, Cu2S), CuInS, Cu2GeS3, CuInxGa1-x(SeS)2 (CIGSS), Cu3BiS3 Cu3SbS4,CuSbS2; Gallium (Ga2S3), Germanium (GeS, GeS2), Indium (InS, In2S3), Iron (FeS, FeS2), Lithium (Li2S), Magnesium (MgS), Mangnese (MnS2), Mercury (HgS), Molybdenum (MoS2, Mo2S5, MoS3), Nickel (NiS, NiS2, Ni2S3), Silver (AgGaS2, Ag2AsS3), Silicon (SiS2), Strontium (SrS), Tin (SnS, SnS2), Titanium (Ti2S3, TiS2, TiS), Tungsten (WS, WS2, W2S5), Zinc (ZnS), and Rare earths: Lanthanum (La2S3), Cerium (Ce2S3), Dysprosium (Dy2S3), Europium (EuS), Dysprosium (Dy2S3), Gd2S3, Nd2S3, Pr2S3, Sm2S3, Ho2S3, Lu2S3, Y2S3, Yb2S3 , …;

Raw materials: 2N-6N, cm pieces, rods, mm grains, micro, submicro and nanoscale sizes, and sputtering target and customized monocrystal and wafer.

(15) Tellurides: Telluride of Aluminum (Al2Te3), Antimony (Sb2Te3), Arsenic (As2Te3), Bismuth (Bi2Te3), Cadmium (CdTe, CdZnTe-CZT, CdMnTe), Chromium (Cr3Te4), Copper (CuTe, Cu2Te), Cobalt (CoTe), Gallium(GaTe, Ga2Te3), Germanium (GeTe, Ge2Sb2Te5, Ge22Sb22Te25), Indium (In2Te3), Iron (FeTe), Lead (PbTe, PbSnTe, PbxSn1-xTe), Magnesium (MgTe), Mercury (HgTe), Mercury (HgZnTe,   HgxCd1-xTe, HgCuTe), Molybdenum (MoTe2), Manganese (MnTe, MnTe2), Silver (AgTe),  and  Tin (SnTe), Zinc (ZnTe, ZnxCd1-xTe), Rare earth: Dysprosium (DyTe, Dy2Te3), Europium (EuTe, Eu2Te3), Gadolinium (GdTe, Gd2Te3) etc.;

Semiconductor materials. Raw materials: 2N-6N, pieces, rods, grains, micro, submicro and nanoscale sizes, and sputtering target and customized monocrystal and wafer.

(16) Silicides of Calcium (CaSi2), Cobalt (CoSi2), Nickel (NiSi2), Iron (FeSi2), ..ZrSi2

1.9 Other semiconductors:
(1) Semiconductor micro and nanoparticles:doped Silicon, Gallium arsenide (GaAs), Cadmium telluride (CdTe), Cadmium sulfide (CdS), CdSe, Copper indium selenide (CuInSe2), Copper indium sulfide (CuInS2), Gallium (Ga2S3), Molybdenum (MoS2), Nickel sulfide (NiS2 99.9%), Tin sulfides (SnS, SnS2), Titanium sulfide (TiS2), Tungsten (WS2), Zinc sulfide (ZnS), most of metals and compounds can be in size of nanometer scale.
 
1.10 Function materials and its workpiece:

Magnetic
 materials and pieces: Nd-Fe-B, Sm-B, Ferrite, powders, tape or geometrical pieces, amorphous alloys tape;
Abrasives/grounding/polishing media: diamond, oxide, carbide, hard alloys, glass beads and balls, casting iron alloy shots, thermal spray powders;
Mould: powder consolidation,
Crucibles/nozzles: metals, oxide, quartz, nitride, carbide; 
Hard alloys: Carbide, Steel, powder, balls, rods, tubes, etc.
Refractory: cottons, textile, bricks, tubes, 
Superalloys and Ceramic (refractory, corrosive & wear resistant and structural works): upon your drawing. 
Lubricants: Graphite, Born nitride, Silicon nitride, Carbon Fluoride, powder and pastes;
Shield materials: E-M wave textile, radiation, Violet ray, X-ray, anti-static fiber etc.
Superconducting materials (wires/cables, targets in metal and oxides);
Battery materials: Oxides (MnOx, NiOx, PbOx, LiMnOx, LiCo/NiOx), micro-Alloys, sulfide, graphite, metals, Silicon, semiconductor compounds and some salts for Lithium-battery, Solar Cell, Hydrogen storage, Ni-H cell, fuel cell, …
Anodes: metals, alloys, oxides etc.
Colorants: (complex) oxides nanosize, ultrafine powder;
Porous materials/piece: catalyst carrier, gas/liquid filter in metallic and ceramics.


2. Semiconductor monocrystals and wafers: 
2.1) Germanium, Indium, Tin, Lead, Cadmium,
Germanium
Dopant: As (N-type), Ga (P-type)
Orientation: [100] off
Carrier concetration: 1017 etc.
Electronic resistivity: 0.001-0.1
Dimensions: d30mm, d100 mm, d200mm, d300mm
 Thickness: 175um

Silicon: 3"-5" wafer, 6"-8" Solar grade
100 mm, 150 mm, 200 mm,
Orientation: <100>
Thickness:

2.2)
III-V compound wafers:
Gallium arsenide:
Dopants: undoped, Cr, Si, Zn, S, Te etc.;
Orientation: <100>, <111>;
Dimensions: diameter 2", 3", 4", 6";
Thickness: 220um, 270um, 350 um, 650 um;
Type: N- or P-; semi insulating, Low resistive;

Gallium phosphide:
Gallium antimonide:
Gallium nitride: 2"
Indium phosphide:
Indium arsenide:
Indium antimonide:

2.3) II-VI compound wafers:
Cadmium sulfide

Cadmium telluride
Cadmium selenide
Zinc sulfide
Zinc selenide

2.4) IV-IV compound wafers:
Silicon carbide (4H, 6H, 2" and 3"),
Dopant: Undoped, Si,
2.5) Others: AgGaS2, AgGaSe2, AgGa1-xInxSe2,  Telluride, Antimonide, Phosphide with dopant options. size: diameter 2"-3"-4", thickness: 0.3-0.6 mm, roughness: 0.5-1 nm, and EPI-ready surface and back surface option.
 
3. Other monocrystals and substrate:
Fluorides: BaF2, SrF2, CaF2, MgF2, CeF2, LaF3, LiF, PbF2 etc.; 
Bromide: NaBr, AgBr, CuBr, TiBr,
Iodide: NaI, KI, CsI, CuI, TlI, AgI, and doped ones
Boride: LaB6;
Oxide such as Barium Titanate, Strontium Titanate, doped titanate, Tantanate (e.g. LSAT...), Tungstenate of Lead, Calcium; 
PbWO3, GdWO3, BGO,
LiTaO3:
 Orientation: X, Y, Z,
 127.86o Y, 36o Y, 42o Y, 64o Y, 
 d45mm, d50.8mm, d76.2mm,
 thickness 0.35-1 mm
LiNbO3,

Optical Crystal or glass (laser rods and laser disc)

(1) Compositions: YAG, GGG, YAP, YLF, GdVO4, Nd-YVO4;
LiNbO3, LiTaO3 doped with Fe2O3 and MgO etc., 
Bi12GeO20, Bi4Ge3O12, Bi12SiO20, La3Ga5.5Nb0.5O14, La3Ga5SiO14,  La3Ga5.5Ta0.5O14Li2B4O7, Ce:Lu2SiO5, MgAl2O4, PbMoO4, TeO2,
AgGaS2, AgGaSe2, AgGa1-xInxSe2: 5x5, 6x6, 8x8 mm, L: 5, 10, 15 mm, or disc at the angle requested.
Custom-made: Be3Al2Si6O18, Y3Ga5O12, Gd3Sc2Ga3O12, Y3Sc2Ga3O12, Gd3Sc2Al3O12, Y3Sc2Ga5O12, Gd2Ga5O12, Y2Sc2Al3O12, ScBeAlO4, ScBeAlO4, ScBO3, BeAl5O16, Al2(WO4)3, La3Lu2Ga2O12, Ca3Ga5SiO13, La3Lu2Ga3O12, Ca3Ga2Ge4O14, La2Ga5GeO14, La2Ga5GeO14, Sr3Ga2Ge4O14, ZnWO4, Al2(WO4)3, ScBO3 ...;
LiF, LiYF4, LiCaAlF6, Na3Ga2Li3F12, Na2Ga2Li3F12, KZnF3, LiSrAlF6, SrAlF5, etc. 
(2) Dopants: single and multi-dopant(s) such as Nd, Nd/Ce, Tm, Ho/Cr/Er/Yb , Cr+4..., Nd:GGG, Nd:YLF, Tm:YAP, Nd:GdVO4.
 Concertration: 0.1-3 at% or x as requested.

(3) Dimensions: Diameter- 2-15 mm, Length: 0.1-0.5 mm (Disc) 50-180 mm (rods)

(4) Surface quality: 1-10 nm or 105

The laser rod performance is instrumentally tested.

Scintillation crystals:
Iodide: CsI, TlI, NaI, AgI,
Oxide: PbWO3, GdWO3, BGO,
=======================
Purity:
"4N": 99.99% by weight, 
"REO": La2O3/all the rare earth oxides,
"RE": La/all the rare earth metals;
"the purity": La/all the elements.
 
Rod List:
Product No. Product Name Category Specifications Details To Order
3300 Gadolinium (Gd) Rod 3N, d3-20mm
 
 
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